深圳市福田区东泽电子商行

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JAN2N2222A 2N2222AJAN 2N2222AJANTX JANT2N2222A

JANS2N2222A 2N2222AJANS
SEMICOA
其他被动元件
1000
最小起订量
-
发货期限
自买家付款之日起3天内
发布日期
2017-10-22
详细属性
品牌SEMICOA
详细描述
Type 2N2222A
Geometry 0400
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N2222A
Generic Part Number:
2N2222A
REF: MIL-PRF-19500/255
Features:
· General-purpose transistor for
switching and amplifier applicatons.
· Housed in TO-18 case.
· Also available in chip form using
the 0400 chip geometry.
· The Min and Max limits shown are
per MIL-PRF-19500/255 which
Semicoa meets in all cases.
· The Typ values are actual batch
averages for Semicoa.
· Radiation Graphs available.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 50 V
Collector-Base Voltage VCBO 75 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current, Continuous IC 800 mA
Operating Junction Temperature TJ -65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-18
Data Sheet No. 2N2222A
OFF Characteristics Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage
IC = 10 μA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 μA
Collector-Emitter Cutoff Current
VCE = 50 V
Collector-Base Cutoff Current
VCB = 60 V
Emitter-Base Cutoff Current
VEB = 4 V
nA
nA
V
Electrical Characteristics
TC = 25oC unless otherwise specified
V
V
nA
V(BR)CBO 75 120 ---
V(BR)CEO 50 65 ---
V(BR)EBO 6.0 7.0 ---
ICES --- 3.0 50
IEBO --- 0.5 10
ICBO1 --- 2.0 10
ON Characteristics Symbol Min Typ Max Unit
DC Current Gain
IC = 100 μA, VCE = 10 V hFE1 50 180 --- ---
IC = 1.0 mA, VCE = 10 V hFE2 75 200 325 ---
IC = 10 mA, VCE = 10 V hFE3 100 200 --- ---
IC = 150 mA, VCE = 10 V (pulse test) hFE4 100 200 300 ---
IC = 500 mA, VCE = 10 V (pulse test) hFE5 30 75 --- ---
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test) VCE(sat)1 --- 0.1 0.3 V dc
IC = 500 mA, IB = 50 mA (pulse test) VCE(sat)2 --- 0.3 1.0 V dc
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test) VBE(sat)1 0.6 0.85 1.2 V dc
IC = 500 mA, IB = 50 mA (pulse test) VBE(sat)2 --- 1.0 2.0 V dc
Small Signal Characteristics Symbol Min Typ Max Unit
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 10 V, f = 1kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
COBO --- 4.5 8 pF
pF
AC hFE 50 240 ---
CIBO --- 17.5 25
---
Switching Characteristics Symbol Min Typ Max Unit
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
ns
tOFF --- 175 300 ns